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Gallium oxide
gallium
Gallium particle
Gallium ingot
Gallium oxide is an inorganic compound with the chemical formula Ga2O3. Gallium trioxide, also known as gallium trioxide, is a wide band gap semiconductor, Eg=4.9eV, whose electrical conductivity and luminescence properties have long attracted people's attention. Ga2O3 is a transparent oxide semiconductor material, which has a broad application prospect in optoelectronic devices. It is used as an insulating layer of Ga-based semiconductor materials and a UV filter. It can also be used as an O2 chemical detector.
Gallium oxide; Gallium trioxide; Gallium oxide ; Gallium oxide (METALS BASIS); Gallium trioxide ; Gallium trioxide,4N; GALLIUM(III) OXIDE; Gallium oxide,4N; Gallium oxide,5N
Applied research editorial broadcast
Gallium oxide is used as a high purity analytical reagent for the preparation of semiconductor materials in the electronics industry.
In 2022, USTCM made significant progress in the field of gallium oxide devices. Two research papers on gallium oxide devices (high-power gallium oxide Schottky diode and gallium oxide photodetector) were accepted by the 68th International Conference on Electronic Devices (IEEE IEDM).
Chemical properties editor
Ga2O3 can react with fluorine gas to produce GaF3, and Ga2O3 is dissolved in 50% HF to get GaF3·3H2O. Ga2O3 is soluble in hot dilute acid, hydrochloric acid and sulfuric acid. The sintered Ga2O3 is insoluble in these acids, even concentrated acids, nor in aqueous solutions of strong alkalis, and can only be dissolved by the melting of NaOH, KOH, or KHSO4 with K2S2O7. Fused with twice the excess NH4Cl at 250ºC to form gallium chloride. At red heat, Ga2O3 reacts with quartz to form a vitreous body, but no new compounds are formed at cooling. Red heat can also react with glazed porcelain crucible.
Under the condition of heating, Ga2O3 can react with many metal oxides. The crystal structure of M(I)GaO2 obtained by alkali metal oxide reaction (above 400ºC) has been determined. Like Al2O3 and Ln2O3, it reacts with MgO, ZnO, CoO, NiO and CuO to form spinel type M(II)Ga2O4. The M(III)GaO3 products of reaction with trivalent metal oxides usually have perovskite or garnet type structure (e.g. LnGaO3 lanthanide galliate). And there are even more complex ternary oxides. Mixed oxides of gallium used in lasers, phosphorescence and luminescent materials have been studied. The luminous properties of galliate are attributed to the vacancy of oxygen. Because of its electromagnetic properties of interest (i.e. piezoelectricity and ferromagnetism), the composition, stability and crystal structure of FeGaO3 have been extensively studied.
Ga2-xFexO3(x≈1) belongs to orthogonal crystal, cell parameters are as follows: a=8.75A, b=9.40A, c=5.07A, coordination number is 8, melting temperature is 1750ºC, density is 5.53g/cm3. The magnetism and crystal structure of NiO·Fe2-xGaxO3 have also been investigated
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